Effect of doping concentration on avalanche multiplication and excess noise factor in submicron APD
نویسندگان
چکیده
A realistic full-band Monte Carlo (FBMC) model is applied to study the effect of doping concentration on multiplication gain and excess noise factor for electronand hole-initiated multiplication in thin InP p–i–n diodes with a range of multiplication lengths of w = 0.1 and 0.24 lm. This model predicts a reduction in excess noise factor for both electronand hole-initiated multiplication as the doping concentration increases. Besides dead-space effect and feedback impact ionization, the electric field profile controlled by the doping concentration significantly contributes to the fall of excess noise in submicron InP p–i–n diodes. 2007 Elsevier Ltd. All rights reserved.
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عنوان ژورنال:
- Microelectronics Reliability
دوره 48 شماره
صفحات -
تاریخ انتشار 2008